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P4C1026-25J4C 参数 Datasheet PDF下载

P4C1026-25J4C图片预览
型号: P4C1026-25J4C
PDF下载: 下载PDF文件 查看货源
内容描述: 超高速256K ×4的静态CMOS RAM [ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM]
分类和应用:
文件页数/大小: 10 页 / 290 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C1026  
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE CONTROLLED)(10)  
AC TEST CONDITIONS  
TRUTH TABLE  
Input Pulse Levels  
GND to 3.0V  
Mode  
CE OE W E  
I/O  
Power  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
3ns  
1.5V  
Standby  
H
X
X
HighZ  
Standby  
DOUT  
Disabled  
L
L
L
H
L
H
H
L
HighZ  
DOUT  
Active  
Active  
Active  
1.5V  
Read  
Write  
See Figures 1 and 2  
X
HighZ  
Figure 2. Thevenin Equivalent  
Figure 1. Output Load  
* including scope and test fixture.  
Note:  
frequency capacitor is also required between VCC and ground. To avoid  
signal reflections, proper termination must be used; for example, a 50Ω  
test environment should be terminated into a 50load with 1.73V  
(Thevenin Voltage) at the comparator input, and a 116resistor must  
be used in series with DOUT to match 166(Thevenin Resistance).  
Because of the ultra-high speed of the P4C1258, care must be taken  
when testing this device; an inadequate setup can cause a normal  
functioning part to be rejected as faulty. Long high-inductance leads  
that cause supply bounce must be avoided by bringing the VCC and  
ground planes directly up to the contactor fingers. A 0.01 µF high  
Document # SRAM127 REV E  
Page 6 of 10