P4C1026
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-25
-15
-35
-20
Sym.
Parameter
Unit
Max
Min
Min Max
Min Max
Min Max
tRC
tAA
tAC
tOH
ReadCycleTime
35
25
25
25
2
ns
ns
15
20
20
Address Access Time
15
15
35
20
35
ns
ns
Chip Enable Access Time
2
2
2
2
3
OutputHoldfromAddressChange
ns
3
3
tLZ
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Chip Enable to Power Up Time
Chip Disable to Power Down Time
tHZ
ns
ns
11
10
8
9
0
0
0
tPU
tPD
0
ns
35
25
15
20
TIMING WAVEFORM OF READ CYCLE NO. 1 (OE CONTROLLED)(5)
TIMING WAVEFORM OF READ CYCLE NO. 2 (ADDRESS CONTROLLED)(5,6)
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
5. WE is HIGH for READ cycle.
6. CE is LOW and OE is LOW for READ cycle.
7. ADDRESSmustbevalidpriorto,orcoincidentwithCE transitionLOW.
8. Transition is measured ± 200 mV from steady state voltage prior to
change, with loading as specified in Figure 1. This parameter is
sampled and not 100% tested.
9. Read Cycle Time is measured from the last valid address to the first
transitioning address.
Document # SRAM127 REV E
Page 4 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
