欢迎访问ic37.com |
会员登录 免费注册
发布采购

P4C1024L-25LM 参数 Datasheet PDF下载

P4C1024L-25LM图片预览
型号: P4C1024L-25LM
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX8, 25ns, CMOS, 0.450 X 0.550 INCH, LCC-32]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 14 页 / 923 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
 浏览型号P4C1024L-25LM的Datasheet PDF文件第3页浏览型号P4C1024L-25LM的Datasheet PDF文件第4页浏览型号P4C1024L-25LM的Datasheet PDF文件第5页浏览型号P4C1024L-25LM的Datasheet PDF文件第6页浏览型号P4C1024L-25LM的Datasheet PDF文件第8页浏览型号P4C1024L-25LM的Datasheet PDF文件第9页浏览型号P4C1024L-25LM的Datasheet PDF文件第10页浏览型号P4C1024L-25LM的Datasheet PDF文件第11页  
P4C1024  
TIMING WAVEFORM OF WRITE CꢁCLE NO. 2 (CE CONTROLLED)(11)  
TRUTH TABLE  
AC TEST CONDITIONS  
Input Pulse Levels  
GND to 3.0V  
3ns  
Mode  
CE1 CE2 OE WE I/O  
Power  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
H
High Z  
High Z  
Standby  
Standby  
Standby  
Standby  
1.5V  
L
1.5V  
L
H
H
H
High Z Active  
DOUT Disabled  
See Fig. 1 and 2  
DOUT  
L
L
H
H
L
H
L
Read  
Write  
Active  
High Z Active  
Figure 2. Thevenin Equivalent  
Figure 1. Output Load  
* including scope and test fixture.  
Note:  
To avoid signal reflections, proper termination must be used; for ex-  
ample, a 50test environment should be terminated into a 50load  
with 1.73V (Thevenin Voltage) at the comparator input, and a 116Ω  
resistor must be used in series with DOUT to match 166(Thevenin  
Resistance).  
Becauseoftheultra-highspeedoftheP4C1024,caremustbetaken  
when testing this device; an inadequate setup can cause a normal  
functioningparttoberejectedasfaulty. Longhigh-inductanceleads  
that cause supply bounce must be avoided by bringing the VCC and  
ground planes directly up to the contactor fingers. A 0.01 µF high  
frequency capacitor is also required between VCC and ground.  
Document # SRAM124 REV C  
Page 7 of 14