P4C1024
AC ELECTRICAL CHARACTERISTICS—READ CꢁCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-15
-20
-25
-35
-45
-55
-70
-85
-100
-120
Sym Parameter Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Unit
Read Cycle Time 15
20
25
35
45
55
70
85
100
120
ns
tRC
tAA
Address Access
Time
15
15
20
20
25
25
35
35
45
45
55
55
70
70
85
85
100
100
120 ns
Chip Enable
Access Time
120 ns
tAC
tOH
tLZ
Output Hold from
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
ns
ns
Address Change
Chip Enable to
3
Output in Low Z
Chip Disable to
Output in High Z
8
7
9
9
11
11
15
15
20
20
25
25
30
30
35
35
40
40
50
50
ns
ns
ns
ns
ns
ns
tHZ
tOE
tOLZ
tOHZ
tPU
Output Enable
Low to Data Valid
Output Enable
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Low to Low Z
Output Enable
High to High Z
7
9
11
20
15
20
20
25
25
30
30
35
35
40
40
45
50
50
Chip Enable to
0
Power Up Time
Chip Disable
to Power Down
Time
12
20
tPD
Document # SRAM124 REV C
Page 4 of 14
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
