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P4C1024L-25LM 参数 Datasheet PDF下载

P4C1024L-25LM图片预览
型号: P4C1024L-25LM
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX8, 25ns, CMOS, 0.450 X 0.550 INCH, LCC-32]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 14 页 / 923 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
 浏览型号P4C1024L-25LM的Datasheet PDF文件第1页浏览型号P4C1024L-25LM的Datasheet PDF文件第2页浏览型号P4C1024L-25LM的Datasheet PDF文件第3页浏览型号P4C1024L-25LM的Datasheet PDF文件第4页浏览型号P4C1024L-25LM的Datasheet PDF文件第6页浏览型号P4C1024L-25LM的Datasheet PDF文件第7页浏览型号P4C1024L-25LM的Datasheet PDF文件第8页浏览型号P4C1024L-25LM的Datasheet PDF文件第9页  
P4C1024  
TIMING WAVEFORM OF READ CꢁCLE NO. 1 (OE CONTROLLED)(5)  
TIMING WAVEFORM OF READ CꢁCLE NO. 2 (ADDRESS CONTROLLED)(5,6)  
TIMING WAVEFORM OF READ CꢁCLE NO. 3 (CE1, CE2 CONTROLLED)(5,7,10)  
Notes:  
5. WE is HIGH for READ cycle.  
9. READ Cycle Time is measured from the last valid address to the first  
transitioning address.  
10. Transitions caused by a chip enable control have similar delays  
irrespective of whether CE1 or CE2 causes them.  
6. CE1 is LOW, CE2 is HIGH and OE is LOW for READ cycle.  
7. ADDRESS must be valid prior to, or coincident with CE1 transition  
LOW and CE2 transition HIGH.  
8. Transition is measured ± 200 mV from steady state voltage prior  
to change, with loading as specified in Figure 1. This parameter is  
sampled and not 100% tested.  
Document # SRAM124 REV C  
Page 5 of 14