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P3C125612JC 参数 Datasheet PDF下载

P3C125612JC图片预览
型号: P3C125612JC
PDF下载: 下载PDF文件 查看货源
内容描述: 高速32K ×8 3.3V CMOS静态RAM [HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM]
分类和应用:
文件页数/大小: 10 页 / 266 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P3C1256  
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE CONTROLLED)(10)  
AC TEST CONDITIONS  
TRUTH TABLE  
Mode  
CE  
OE WE  
I/O  
Power  
Input Pulse Levels  
GND to 3.0V  
Standby  
X
X
Standby  
H
X
L
High Z  
High Z  
High Z  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
3ns  
1.5V  
Standby  
X
H
X
H
Standby  
Active  
DOUT Disabled  
1.5V  
Read  
Write  
L
L
H
L
DOUT  
L
Active  
Active  
See Figures 1 and 2  
High Z  
X
Figure 1. Output Load  
Figure 2. Thevenin Equivalent  
* including scope and test fixture.  
Note:  
Because of the ultra-high speed of the P3C1256, care must be taken  
when testing this device; an inadequate setup can cause a normal  
functioning part to be rejected as faulty. Long high-inductance leads that  
cause supply bounce must be avoided by bringing the VCC and ground  
planes directly up to the contactor fingers. A 0.01 µF high frequency  
capacitor is also required between VCC and ground. To avoid signal  
reflections, proper termination must be used; for example, a 50test  
environment should be terminated into a 50load with 1.73V (Thevenin  
Voltage) at the comparator input, and a 116resistor must be used in  
series with DOUT to match 166(Thevenin Resistance).  
Document # SRAM122 REV B  
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