P3C1256
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0 MHz)
Parameter
Test Conditions
VIN = 0V
Max
10
Unit
pF
Symbol
CIN
Input Capacitance
Output Capacitance
COUT
VOUT = 0V
10
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Temperature
Range
Test
Conditions
Symbol
Parameter
Unit
-20 -25
-12 -15
Commercial
Industrial
*
*
110 100
N/A 115
mA
mA
95
90
ICC
Dynamic Operating Current
110 105
*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e., CE, and WE ≤ VIL (max), OE is high. Switching inputs are 0V
and 3V.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
-12
-15
-20
-25
Unit
ns
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
tRC
Read Cycle Time
Address Access Time
12
15
20
25
tAA
tAC
tOH
tLZ
12
12
15
15
20
20
25
25
ns
Chip Enable Access
Time
ns
ns
ns
Output Hold from
Address Change
2
2
2
2
2
2
2
2
Chip Enable to
Output in Low Z
tHZ
tOE
Chip Disable to
Output in High Z
ns
7
7
8
9
9
10
12
Output Enable Low
to Data Valid
11
ns
ns
Output Enable Low to
Low Z
tOLZ
0
0
0
0
0
0
0
0
Output Enable High
to High Z
tOHZ
tPU
ns
ns
ns
6
7
9
10
20
Chip Enable to Power
Up Time
Chip Disable to
Power Down Time
tPD
12
15
20
Document # SRAM122 REV B
Page 3 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
