P3C1256L - 32K x 8 STATIC CMOS RAM
AC CHARACTERISTICS—WRITE CꢄCLE
(Over Recommended Operating Temperature & Supply Voltage)
-55
-70
-85
Symbol Parameter
Min
Unit
Max
Min
Max
Min
Max
tWC
tCW
tAW
tAS
Write Cycle Time
55
50
50
0
70
85
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Enable Time to End of Write
Address Valid to End of Write
Address Setup Time
60
60
0
75
75
0
tWP
tAH
tDW
tDH
tWZ
tOW
Write Pulse Width
40
0
50
0
60
0
Address Hold Time
Data Valid to End of Write
Data Hold Time
25
0
30
0
35
0
Write Enable to Output in High Z
Output Active from End of Write
25
30
35
5
5
5
TIMIꢀꢂ WAVEFORM OF WRITE CꢄCLE ꢀO. 1 (WE COꢀTROLLED)(10,11)
Notes:
10. CE and WE must be LOW for WRITE cycle.
13. Write Cycle Time is measured from the last valid address to the first
11. OE is LOW for this WRITE cycle to show tWZ and tOW
12. If CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state
.
transitioning address.
Document # SRAM143 REV A
Page 5
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