P3C1256L - 32K x 8 STATIC CMOS RAM
CAPACITAꢀCES(4)
(VCC = 3.3V, TA = 25°C, f = 1.0MHz)
Symbol
CIN
Parameter
Test Conditions
VIN=0V
Max
7
Unit
pF
Input Capacitance
Output Capacitance
COUT
VOUT=0V
9
pF
POWER DISSIPATIOꢀ CHARACTERISTICS VS. SPEED
*
**
Sym Parameter
Temperature Range
Unit
-55
70
-70
70
-85
-55
15
25
35
-70
15
25
35
-85
15
25
35
Commercial
Industrial
Military
70
85
mA
mA
mA
ICC
Dynamic Operating Current*
85
85
100
100
100
* Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate. The device is continuously
enabled for writing, i.e. CE and WE ≤ VIL (max), OE is high. Switching inputs are 0V and 3V.
** As above but @ f=1 MHz and VIL/VIH = 0V/VCC.
AC ELECTRICAL CHARACTERISTICS—READ CꢄCLE
(Over Recommended Operating Temperature & Supply Voltage)
-55
-70
-85
Sym
Parameter
Unit
Min
Max
Min
Max
Min
Max
tRC
tAA
Read Cycle Time
55
70
85
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
55
55
70
70
85
85
tAC
tOH
tLZ
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Enable Low to Data Valid
Output Enable Low to Low Z
Output Enable High to High Z
Chip Enable to Power Up Time
Chip Disable to Power Down Time
5
5
5
5
5
5
tHZ
20
30
25
35
30
40
tOE
tOLZ
tOHZ
tPU
tPD
5
0
5
0
5
0
20
55
25
70
30
85
Document # SRAM143 REV A
Page 3
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
