January 2006
ASM2P20805A
rev 0.2
Power Supply Characteristics
Symbol
Parameter
Test Conditions1
Min
Typ2
Max
Unit
ICCL
ICCH
ICCZ
Quiescent Power Supply
Current
VCC = Max. VIN = GND or VCC
-
0.1
20
µA
Power Supply Current per
Input HIGH
VCC = Max.
∆ICC
-
-
35
65
250
100
µA
VIN = VCC –0.6V
V
CC= Max.
Dynamic Power Supply
Current per Output3
VIN = VCC
ICCD
CL= 15pF
µA/MHz
V
IN = GND
All Outputs Toggling
VIN = VCC
VCC= Max.
CL= 15pF
-
-
-
140
140
170
160
160
200
V
IN = GND
All Outputs Toggling
fi = 133MHz
V
IN = VCC –0.6V
VIN = GND
Total Power Supply
Current4
IC
mA
VIN = VCC
VCC= Max.
VIN = GND
CL= 15pF
All Outputs Toggling
fi = 166MHz
V
IN = VCC –0.6V
VIN= GND
-
170
200
Notes:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 2.5V, +25°C ambient.
3. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
4. IC = IQUIESCENT + IINPUTS + IDYNAMIC
I
C = ICC + ∆ICC DHNT + ICCD (fONO)
ICC = Quiescent Current (ICCL, ICCH and ICCZ
)
∆ICC = Power Supply Current for a TTL High Input (VIN = VCC -0.6V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fO = Output Frequency
NO = Number of Outputs at fO
2.5V CMOS Dual 1-To-5 Clock Driver
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Notice: The information in this document is subject to change without notice.
PULSECORE [ PulseCore Semiconductor ]
