AS80SSTVF16859
&
DC Electrical Characteristics - DDRI-400 (PC3200)
TA = 0° C to 70° C, V = 2.6 ± 0.1 V, and V
= 2.6 ± 0.1 V (unless otherwise stated)
DD
DDQ
Guaranteed by design. Not 100% tested in production..
Symbol
Parameters
Test conditions
I = -18 mA
VDD
Min
Typ
Max
Units
V
2.5 V
-1.2
V
IK
I
2.5 V to
2.7 V
V
0.2
-
DD
I
= -100 µA
V
V
V
OH
V
OH
I
= -8 mA
2.5 V
1.95
OH
2.5 V to
2.7 V
I
= 100 µA
0.2
OL
V
OL
I
= 8 mA
2.5 V
2.7 V
2.7 V
0.35
± 5
V
OL
I
All inputs
V = V or GND
µA
µA
I
I
DD
Standby (static)
RESETB = GND
0.01
I
Operating
(static)
V = V
or V
,
DD
I
IH(AC)
IL(AC)
DD
2.7 V
25
mA
RESETB = V
RESETB = V
,
DD
Dynamic
operating (clock
only)
µA/
clock
MHz
V = V
or V
,
I
IH(AC)
IL(AC)
2.7 V
30
10
CLK and CLKB switching
50% duty cycle
I = 0
O
RESETB = V
,
DD
V = V
or V
,
I
I
IH(AC)
IL(AC)
µΑ/
clock
MHz/
data
input
DDD
CLK and CLKB = switching
50% duty cycle
Dynamic
operating (per
each data input)
2.7 V
One data input switching at
half clock frequency, 50% duty
cycle
2.5 V to
2.7 V
r
Output high
Output low
I
= -16 mA
= 16 mA
7
7
20
20
4
Ω
Ω
Ω
OH
OH
2.5 V to
2.7 V
r
I
OL
OL
|r - r | each
OH
OL
r
I = 20 mA, T = 25° C
2.6 V
O(D)
O
A
separate bit
Data inputs
V = V
± 310 mV,
REF
2.6 V
2.6 V
2.6V
2.5
2.5
2.5
3.5
3.5
3.5
pF
pF
pF
I
V
= 1.25 V,
= 360 mV
ICR
C
CLK and CLKB
RESETB
i
V
I(PP)
V = V or GND
I
DD
8/6/03, v.0.10
Alliance Semiconductor
P. 7 of 13
PULSECORE [ PulseCore Semiconductor ]
