PSHI 50/12
15
150
ns
12
mJ
8
600
VCE = 600 V
GE = ±15 V
RG = 47 Ω
V
mJ
ns
td(off)
VCE = 600V
GE = ±15V
RG = 47Ω
Eoff
TVJ = 125°C
Eon
t
t
V
10
5
100
50
0
400
Eoff
td(on)
tr
TVJ = 125°C
4
0
200
Eon
tf
42T120
42T120
0
0
A
0
20
40
IC
60
0
20
40
IC
A
60
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
160
800
4
mJ
3
8
td(off)
td(on)
mJ
ns
ns
Eoff
Eon
120
6
4
2
0
600
Eoff
t
t
Eon
tr
2
1
0
80
40
0
400
VCE = 600 V
GE = ±15 V
IC = 25 A
TVJ = 125°C
VCE = 600 V
V
V
GE = ±15 V
IC = 25 A
TVJ = 125°C
200
tf
42T120
42T120
0
0
20
40
60
80 Ω 100
0
20
40
60
RG
80 Ω 100
RG
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
60
A
10
diode
IGBT
K/W
1
ZthJC
RG = 47 Ω
TVJ = 125°C
ICM
40
0,1
0,01
0,001
20
0
single pulse
MDI...50-12P1
42T120
0,0001
0,000010,0001 0,001 0,01
0,1
1
10
s
0
200 400 600 800 1000 1200 1400V
VCE
t
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
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D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
