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PSHI50-12 参数 Datasheet PDF下载

PSHI50-12图片预览
型号: PSHI50-12
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块 [IGBT Module]
分类和应用: 双极性晶体管
文件页数/大小: 4 页 / 132 K
品牌: POWERSEM [ POWERSEM GMBH ]
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ECO-PAC
TM
2
IGBT Module
Preliminary Data Sheet
PSHI 50/12*
I
C25
= 49 A
V
CES
= 1200 V
V
CE(sat)typ.
= 3.1 V
F10
A1
K10
K13
H13
S18
N9
NTC
P18
PSHI 50/12*
*NTC optional
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 47
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 47
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
± 20
49
33
50
V
CES
10
208
µs
W
V
V
A
A
A
Features
Package with DCB ceramic base plate
Isolation voltage 3000 V
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
Applications
AC motor control
AC servo and robot drives
power supplies
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
3.1
3.5
4.5
3.7
6.5
1.1
4.2
180
100
70
500
70
4.6
3.4
1.65
1.2
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.6 K/W
K/W
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
= ± 20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 30 A
V
GE
= 15/0 V; R
G
= 47
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These Devices are sensitive
to electrostatic discharge. Users
should observe proper ESD handling
precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20