5.0 mm INFRARED EMITTING DIODE
L515EIR1C
REV:A / 1
FEATURES
* High reliability
* Low-voltage characteristics
* Narrow view angle
* Pb FREE Products
* RoHS Compliant
CHIP MATERIALS
*
*
Dice Material : GaAlAs/GaAs
Lens Color : WATER CLEAR
ABSOLUTE MAXIMUM RATING : ( Ta = 25°C )
MAX
160
5
SYMBOL
PARAMETER
UNIT
mW
V
PD
Power Dissipation Per Chip
VR
Reverse Voltage Per Chip
IF
Forward Current Per Chip
100
400
mA
mA
IPF
Peak forward current Per Chip (F=1KHZ,duty=0.1)
Operating Temperature Range
Storage Temperature Range
Topr
Tstg
-25°C to 85°C
-25°C to 85°C
IFP Condition : Pulse Width≤10msec, 10% duty cycle
ELECTRO-OPTICAL CHARACTERISTICS : ( Ta = 25°C )
TEST
CONDITION
SYMBOL
VF
PARAMETER
Forward Voltage
MIN. TYP. MAX. UNIT
1.2
1.4
IF = 20mA
IF = 100mA
V
1.6
10
IR
Reverse Current
VR = 5V
µA
nm
deg
λP
Peak Emission Wavelength
IF = 20mA
IF = 20mA
940
25
2θ1/2 Half Intensity Angle
24
120
IF = 20mA
IF=100mA
IE Radiant Intensity
mw/sr
DRAWING NO. : DS-23-09-0069
DATE : 2009-08-10
Page : 3
PARALIGHT [ PARA LIGHT ELECTRONICS CO., LTD. ]
