ML674001/ML67Q4002/ML67Q4003
Electrical Characteristics
Absolute Maximum Ratings [1]
Item
Digital power supply voltage (core)
Digital power supply voltage (I/O)
Input voltage
Symbol
VDD_CORE
VDD_IO
VI
Conditions
GND = AGND = 0 V
TA = 25°C
Rating
Unit
-0.3 to +3.6
V
-0.3 to +4.6
-0.3 to VDD_IO+0.3
Output voltage
VO
-0.3 to VDD_IO+0.3
Analog power supply voltage
Analog reference voltage
Analog input voltage
Input current
Output current [2]
Output current [3]
AVDD
VREF
VAI
-0.3 to VDD_IO+0.3
-0.3 to (VDD_IO + 0.3) and -0.3 to (AVDD + 0.3)
-0.3 to VREF
-10 to +10
-20 to +20
-30 to +30
680
II
mA
IO
Power dissipation
PD
LFBGA, TA = 85°C
LQFP, TA = 85°C
mW
mW
°C
1000
Storage temperature
TSTG
—
-50 to +150
1. Exceeding these maximum ratings could cause damage or lead to permanent deterioration of the device.
2. All output pins except XA[15:0]
3. XA[15:0]
Recommended Operating Conditions
(GND = 0 V)
Item
Symbol
VDD_CORE
VDD_IO
AVDD
Conditions
Minimum
Typical
2.5
Maximum
2.75
Unit
Digital power supply voltage (core)
Digital power supply voltage (I/O)
Analog power supply voltage
Analog reference voltage
V
DD_IO ≥ VDD_CORE
2.25
3.0
3.0
3.0
1
V
3.3
3.6
AVDD = VDD_IO
3.3
3.6
VREF
VREF = AVDD = VDD_IO
3.3
3.6
[1]
Operating frequency
fOP
VDD_CORE = 2.25 to 2.75 V,
DD_IO = 3.0 to 3.6 V
—
33.333
MHz
°C
V
Ambient temperature
TA
—
-40
25
+85
1. Oscillator frequencies between 16 MHz and 33 MHz. Minimum of 2.56 MHz for external SDRAM. Minimum of 6.4 MHz for external EDO-DRAM. Minimum of 2 MHz for analog-to-digital converter
DC Characteristics
(VDD_CORE = 2.25 to 2.75 V, VDD_IO = 3.0 to 3.6 V, TA = -40 to +85°C)
Item
Symbol
VIH
Conditions
Minimum
0.8VDD_IO
-0.3
Typical
—
Maximum
Unit
High level input voltage
—
VDD_IO + 0.3
V
Low level input voltage
VIL
—
0.2VDD_IO
2.1
Schmitt input buffer threshold voltage
VT+
—
1.6
1.1
0.5
—
VT-
0.7
—
VHYS
VOH
0.4
—
High level output voltage
Low level output voltage
IOH = -100 µA
OH = -4 mA
VDD – 0.2
2.35
—
—
I
—
—
VOL
IOL = 100 µA
IOL = 4 mA
—
0.2
[1]
VOL
—
—
0.45
0.45
50
[2]
VOL
IOL = 6 mA
—
—
Input leak current [3]
IIH/IIL
VI = 0 V to VDD_IO
-50
—
µA
[4]
[5]
IIL
VI = 0 V, Pull-up resistance of 50 kOhm
VI = 0V to AVDD
-200
-5
-66
—
-10
5
[6]
II
April 2004, Rev 2.0
Oki Semiconductor • 15