Technische Information / technical information
IGBT-Module
IGBT-modules
FP40R12KT3
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ† = f (t)
V•Š = ±15 V, I† = 40 A, V†Š = 600 V, TÝÎ = 125°C
10
1
9
8
7
6
5
4
3
2
1
0
EÓÒ
EÓËË
ZÚÌœ† : IGBT
0,1
i:
rÍ[K/W]: 0,06769 0,2709 0,1523 0,1052
0,002345 0,0282 0,1128 0,282
1
2
3
4
τÍ[s]:
0,01
0,001
0
10
20
30
R• [Â]
40
50
60
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlaßkennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 27 Â, TÝÎ = 125°C
90
80
70
60
50
40
30
80
TÝÎ = 25°C
TÝÎ = 125°C
70
60
50
40
30
20
10
0
20
I†, Modul
I†, Chip
10
0
0
200
400
600 800
V†Š [V]
1000 1200 1400
0,0
0,5
1,0
1,5
VΠ[V]
2,0
2,5
3,0
prepared by: Andreas Schulz
approved by: Robert Severin
date of publication: 2003-7-8
revision: 2.0
7
EUPEC [ EUPEC GMBH ]
