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FP40R12KT3 参数 Datasheet PDF下载

FP40R12KT3图片预览
型号: FP40R12KT3
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT逆变器 [IGBT-inverter]
分类和应用: 晶体晶体管功率控制双极性晶体管局域网
文件页数/大小: 11 页 / 391 K
品牌: EUPEC [ EUPEC GMBH ]
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Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FP40R12KT3  
Vorläufige Daten  
preliminary data  
IGBT-Brems-Chopper / IGBT-brake-chopper  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1200  
V
Kollektor-Dauergleichstrom  
DC-collector current  
TÊ = 80°C  
TÊ = 25°C  
I†ÒÓÑ  
I†  
15  
25  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms, T† = 80°C  
T† = 25°C  
I†ç¢  
PÚÓÚ  
30  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
105  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
+/-20  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 15 A, V•Š = 15 V, TÝÎ = 25°C  
I† = 15 A, V•Š = 15 V, TÝÎ = 125°C  
1,70 2,15  
1,90  
V
V
V†Š ÙÈÚ  
V•ŠÚÌ  
Q•  
Gate-Schwellenspannung  
gate threshold voltage  
I† = 0,50 mA, V†Š = V•Š, TÝÎ = 25°C  
5,0  
5,8  
6,5  
V
µC  
Â
Gateladung  
gate charge  
V•Š = -15 V ... +15 V  
0,15  
0,00  
1,10  
0,04  
Interner Gatewiderstand  
internal gate resistor  
R•ÍÒÚ  
CÍþÙ  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C  
V†Š = 25 V, V•Š = 0 V  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
f = 1 MHz, TÝÎ = 25°C  
V†Š = 25 V, V•Š = 0 V  
CØþÙ  
I†Š»  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
5,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
I•Š»  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 15 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓÒ = 75 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 75 Â, TÝÎ = 125°C  
tÁ ÓÒ  
tØ  
0,09  
0,09  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 15 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓÒ = 75 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 75 Â, TÝÎ = 125°C  
0,03  
0,05  
µs  
µs  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 15 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓËË = 75 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 75 Â, TÝÎ = 125°C  
tÁ ÓËË  
tË  
0,42  
0,52  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 15 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓËË = 75 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 75 Â, TÝÎ = 125°C  
0,07  
0,09  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 15 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓÒ = 75 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 75 Â, TÝÎ = 125°C  
EÓÒ  
EÓËË  
1,50  
2,10  
mJ  
mJ  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 15 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓËË = 75 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 75 Â, TÝÎ = 125°C  
1,10  
1,30  
mJ  
mJ  
Kurzschlußverhalten  
SC data  
t« ù 10 µsec, V•Š ù 15 V  
TÝÎù 125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š · di/dt  
I»†  
60  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
1,20 K/W  
prepared by: Andreas Schulz  
approved by: Robert Severin  
date of publication: 2003-7-8  
revision: 2.0  
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