Technische Information / technical information
IGBT-Module
IGBT-Modules
FF800R12KE3
vorläufige Daten
preliminary data
Transienter Wärmewiderstand
Transient thermal impedance
ZthJC = f (t)
0,1
0,01
Zth : IGBT
Zth : Diode
0,001
0,001
0,01
0,1
1
10
t [s]
i
1
2
3
4
ri [K/kW] : IGBT
13,45
6,897E-01
18,37
16,12
1,83
0,60
ꢁ [s] : IGBT
5,634E-02
20,16
7,451E-02
2,997E-02
21,17
2,647E-02
3,820E-03
4,30
2,850E-03
i
ri [K/kW] : Diode
ꢁ [s] : Diode
4,452E-01
i
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
VGE=±15V, Tvj=125°C
1800
IC,Chip
1600
1400
1200
1000
800
IC,Chip
600
400
200
0
0
200
400
600
800
1000
1200
1400
VCE [V]
DB_FF800R12KE3_2.0.xls
2002-07-30
7 (8)
EUPEC [ EUPEC GMBH ]
