BSM 200 GA 120 DN2
Typ. capacitances
Typ. gate charge
C = f (V )
V
= ¦ (Q
)
CE
GE
Gate
parameter: I
= 200 A
parameter: V = 0 V, f = 1 MHz
C puls
GE
10 2
20
V
nF
16
C
VGE
Ciss
600 V
800 V
14
12
10
8
10 1
Coss
Crss
10 0
6
4
2
0
0
10 -1
200
400
600
800 1000
nC
QGate
1400
0
5
10
15
20
25
30
V
VCE
40
Reverse biased safe operating area
= f(V T = 150°C
Short circuit safe operating area
I = f(V ) , T = 150°C
Csc
I
)
,
Cpuls
CE
j
CE
j
parameter: VGE = ± 15 V, tp £ 1 ms, L < 20 nH
parameter: VGE = ± 15 V, tSC £ 10 µs, L < 20 nH
2.5
12
ICpuls C
I
ICsc/IC
di/dt =
1000A/µs
3000A/µs
5000A/µs
di/dt = 1000A/µs
3000A/µs
8
6
4
5000A/µs
1.5
1.0
° allowed number of
short circuit: <1000
° time between short
circuit: >1s
0.5
0.0
2
0
0
200 400 600 800 1000 1200
V
VCE
1600
0
200 400 600 800 1000 1200
V
VCE
1600
6
Oct-27-1997
EUPEC [ EUPEC GMBH ]
