BSM 200 GA 120 DN2
Power dissipation
Safe operating area
I = ¦ (V
P
= ¦ (T )
)
CE
tot
C
C
parameter: T £ 150 °C
parameter: D = 0, T = 25°C , T £ 150 °C
C j
j
10 3
1600
W
t
= 21.0µs
p
A
Ptot
IC
1200
100 µs
10 2
10 1
10 0
1000
800
600
400
1 ms
10 ms
200
0
DC
10 3
0
20
40
60
80 100 120 °C
160
10 0
10 1
10 2
V
TC
VCE
Collector current
I = (T )
Transient thermal impedance IGBT
= (t )
Z
¦
¦
p
C
C
th JC
parameter: V
15 V , T 150 °C
parameter: D = t / T
³
£
GE
j
p
10 0
320
A
K/W
10 -1
IC
ZthJC
240
10 -2
200
160
120
80
D = 0.50
0.20
10 -3
0.10
0.05
single pulse
10 -4
0.02
0.01
40
0
10 -5
0
20
40
60
80 100 120 °C
TC
160
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
4
Oct-27-1997