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BSM200GA120DN2 参数 Datasheet PDF下载

BSM200GA120DN2图片预览
型号: BSM200GA120DN2
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT功率模块 [IGBT Power Module]
分类和应用: 晶体晶体管开关双极性晶体管通用开关局域网
文件页数/大小: 11 页 / 202 K
品牌: EUPEC [ EUPEC GMBH ]
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BSM 200 GA 120 DN2  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Switching Characteristics, Inductive Load at T = 125 °C  
j
Turn-on delay time  
= 600 V, V = 15 V, I = 200 A  
t
ns  
d(on)  
V
CC  
GE  
C
W
R
= 4.7  
-
-
-
-
110  
80  
220  
160  
800  
120  
Gon  
Rise time  
= 600 V, V = 15 V, I = 200 A  
t
r
V
CC  
GE  
C
W
= 4.7  
R
Gon  
Turn-off delay time  
= 600 V, V = -15 V, I = 200 A  
t
d(off)  
V
CC  
GE  
C
W
R
= 4.7  
550  
80  
Goff  
Fall time  
= 600 V, V = -15 V, I = 200 A  
t
f
V
CC  
GE  
C
W
= 4.7  
R
Goff  
Free-Wheel Diode  
Diode forward voltage  
V
V
F
I = 200 A, V = 0 V, T = 25 °C  
-
-
2.3  
1.8  
2.8  
-
F
GE  
j
I = 200 A, V = 0 V, T = 125 °C  
F
GE  
j
Reverse recovery time  
I = 200 A, V = -600 V, V = 0 V  
t
µs  
µC  
rr  
F
R
GE  
di /dt = -2000 A/µs, T = 125 °C  
-
0.5  
-
F
j
Reverse recovery charge  
I = 200 A, V = -600 V, V = 0 V  
Q
rr  
F
R
GE  
di /dt = -2000 A/µs  
F
T = 25 °C  
-
-
12  
36  
-
-
j
T = 125 °C  
j
3
Oct-27-1997