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BSM200GB170DLC 参数 Datasheet PDF下载

BSM200GB170DLC图片预览
型号: BSM200GB170DLC
PDF下载: 下载PDF文件 查看货源
内容描述: 技术信息 [Technical Information]
分类和应用: 晶体晶体管局域网
文件页数/大小: 8 页 / 83 K
品牌: EUPEC [ EUPEC GMBH ]
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Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
BSM 200 GB 170 DLC  
Charakteristische Werte / Characteristic values  
min.  
typ. max.  
Transistor / Transistor  
I
C = 200A, VCE = 900V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
V
GE = ±15V, RG = 7,5, Tvj = 25°C  
td,on  
-
-
0,1  
0,1  
-
-
µs  
µs  
VGE = ±15V, RG = 7,5, Tvj = 125°C  
IC = 200A, VCE = 900V  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
VGE = ±15V, RG = 7,5, Tvj = 25°C  
tr  
-
-
0,1  
0,1  
-
-
µs  
µs  
VGE = ±15V, RG = 7,5, Tvj = 125°C  
IC = 200A, VCE = 900V  
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
VGE = ±15V, RG = 7,5, Tvj = 25°C  
td,off  
-
-
0,8  
0,9  
-
-
µs  
µs  
VGE = ±15V, RG = 7,5, Tvj = 125°C  
IC = 200A, VCE = 900V  
Fallzeit (induktive Last)  
fall time (inductive load)  
VGE = ±15V, RG = 7,5, Tvj = 25°C  
VGE = ±15V, RG = 7,5, Tvj = 125°C  
IC = 200A, VCE = 900V, VGE = 15V  
RG = 7,5, Tvj = 125°C, LS = 60nH  
tf  
-
-
0,03  
0,03  
-
-
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
Eon  
Eoff  
-
-
90  
65  
-
-
mWs  
mWs  
I
C = 200A, VCE = 900V, VGE = 15V  
RG = 7,5, Tvj = 125°C, LS = 60nH  
P 10µsec, VGE 15V, RG = 7,5Ω  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
t
Kurzschlußverhalten  
SC Data  
TVj125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt  
ISC  
-
-
800  
30  
-
-
A
Modulinduktivität  
stray inductance module  
LsCE  
nH  
Modulleitungswiderstand, Anschlüsse - Chip  
module lead resistance, terminals - chip  
RCC’+EE’  
pro Zweig / per arm  
-
0,6  
-
mΩ  
Charakteristische Werte / Characteristic values  
min.  
typ. max.  
Diode / Diode  
IF = 200A, VGE = 0V, Tvj = 25°C  
Durchlaßspannung  
VF  
IRM  
Qr  
-
-
2,1  
2,1  
2,5  
2,5  
V
V
forward voltage  
IF = 200A, VGE = 0V, Tvj = 125°C  
IF = 200A, - diF/dt = 2300A/µsec  
VR = 900V, VGE = -10V, Tvj = 25°C  
VR = 900V, VGE = -10V, Tvj = 125°C  
IF = 200A, - diF/dt = 2300A/µsec  
VR = 900V, VGE = -10V, Tvj = 25°C  
VR = 900V, VGE = -10V, Tvj = 125°C  
IF = 200A, - diF/dt = 2300A/µsec  
VR = 900V, VGE = -10V, Tvj = 25°C  
VR = 900V, VGE = -10V, Tvj = 125°C  
Rückstromspitze  
peak reverse recovery current  
-
-
160  
200  
-
-
A
A
Sperrverzögerungsladung  
recovered charge  
-
-
60  
-
-
µAs  
µAs  
105  
Abschaltenergie pro Puls  
reverse recovery energy  
Erec  
-
-
25  
50  
-
-
mWs  
mWs  
2(8)  
BSM200GB170DLC