Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM200GB120DLC
vorläufige Daten
preliminary data
Charakteristische Werte / Characteristic values
min. typ. max.
Transistor / Transistor
IC = 200A, VCE = 600V
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
V
GE = ±15V, RG = 4,7Ω, Tvj = 25°C
VGE = ±15V, RG = 4,7Ω, Tvj = 125°C
C = 200A, VCE = 600V
GE = ±15V, RG = 4,7Ω, Tvj = 25°C
VGE = ±15V, RG = 4,7Ω, Tvj = 125°C
C = 200A, VCE = 600V
GE = ±15V, RG = 4,7Ω, Tvj = 25°C
VGE = ±15V, RG = 4,7Ω, Tvj = 125°C
C = 200A, VCE = 600V
GE = ±15V, RG = 4,7Ω, Tvj = 25°C
VGE = ±15V, RG = 4,7Ω, Tvj = 125°C
C = 200A, VCE = 600V, VGE = 15V
G = 4,7Ω, Tvj = 125°C, LS = 60nH
IC = 200A, VCE = 600V, VGE = 15V
G = 4,7Ω, Tvj = 125°C, LS = 60nH
P ≤ 10µsec, VGE ≤ 15V, RG = 4,7Ω
td,on
-
-
0,05
0,06
-
-
µs
µs
I
Anstiegszeit (induktive Last)
rise time (inductive load)
V
tr
-
-
0,05
0,07
-
-
µs
µs
I
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
V
td,off
-
-
0,57
0,57
-
-
µs
µs
I
Fallzeit (induktive Last)
fall time (inductive load)
V
tf
-
-
0,04
0,05
-
-
µs
µs
I
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
R
Eon
-
-
22
23
-
-
mWs
mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
R
Eoff
t
Kurzschlußverhalten
SC Data
TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt
ISC
-
-
1250
25
-
-
A
Modulinduktivität
stray inductance module
LsCE
nH
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
TC=25°C
RCC‘+EE‘
-
0,60
-
mΩ
Charakteristische Werte / Characteristic values
min. typ. max.
Diode / Diode
IF = 200A, VGE = 0V, Tvj = 25°C
Durchlaßspannung
VF
IRM
Qr
-
1,8
2,3
V
V
forward voltage
IF = 200A, VGE = 0V, Tvj = 125°C
-
1,7
I
F = 200A, - diF/dt = 4000A/µsec
R = 600V, VGE = -15V, Tvj = 25°C
VR = 600V, VGE = -15V, Tvj = 125°C
F = 200A, - diF/dt = 4000A/µsec
R = 600V, VGE = -15V, Tvj = 25°C
VR = 600V, VGE = -15V, Tvj = 125°C
F = 200A, - diF/dt = 4000A/µsec
R = 600V, VGE = -15V, Tvj = 25°C
Rückstromspitze
peak reverse recovery current
V
-
-
240
300
-
-
A
A
I
Sperrverzögerungsladung
recovered charge
V
-
-
23
42
-
-
µAs
µAs
I
Abschaltenergie pro Puls
reverse recovery energy
V
Erec
-
-
6
-
-
mWs
mWs
VR = 600V, VGE = -15V, Tvj = 125°C
14
2(8)
DB_BSM200GB120DLC.xls