BSM 100 GB 120 DN2
Typ. capacitances
Typ. gate charge
C = f (V )
V
= ¦ (Q
)
CE
GE
Gate
parameter: I
= 100 A
parameter: V = 0 V, f = 1 MHz
C puls
GE
10 2
20
V
nF
16
C
VGE
600 V
800 V
14
12
10
8
10 1
Ciss
10 0
Coss
Crss
6
4
2
0
0
10 -1
100
200
300
400
500 nC 650
0
5
10
15
20
25
30
V
VCE
40
QGate
Reverse biased safe operating area
= f(V T = 150°C
Short circuit safe operating area
I = f(V ) , T = 150°C
Csc
I
)
,
Cpuls
CE
j
CE
j
parameter: VGE = 15 V
parameter: VGE = ± 15 V, tSC £ 10 µs, L < 25 nH
2.5
12
ICpuls/IC
ICsc/IC
8
6
4
1.5
1.0
0.5
0.0
2
0
0
200 400 600 800 1000 1200
V
VCE
1600
0
200 400 600 800 1000 1200
V
VCE
1600
6
Oct-21-1997
EUPEC [ EUPEC GMBH ]
