BSM 100 GB 120 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
= 600 V, V = 15 V, I = 100 A
t
ns
d(on)
V
CC
GE
C
W
R
= 6.8
-
-
-
-
130
80
260
160
600
100
Gon
Rise time
= 600 V, V = 15 V, I = 100 A
t
r
V
CC
GE
C
W
= 6.8
R
Gon
Turn-off delay time
= 600 V, V = -15 V, I = 100 A
t
d(off)
V
CC
GE
C
W
R
= 6.8
400
70
Goff
Fall time
= 600 V, V = -15 V, I = 100 A
t
f
V
CC
GE
C
W
= 6.8
R
Goff
Free-Wheel Diode
Diode forward voltage
V
V
F
I = 100 A, V = 0 V, T = 25 °C
-
-
2.3
1.8
2.8
-
F
GE
j
I = 100 A, V = 0 V, T = 125 °C
F
GE
j
Reverse recovery time
I = 100 A, V = -600 V, V = 0 V
t
µs
µC
rr
F
R
GE
di /dt = -1000 A/µs, T = 25 °C
-
0.3
-
F
j
Reverse recovery charge
I = 100 A, V = -600 V, V = 0 V
Q
rr
F
R
GE
di /dt = -1000 A/µs
F
T = 25 °C
-
-
4
-
-
j
T = 125 °C
12
j
3
Oct-21-1997