BSM 100 GB 120 DN2
Power dissipation
Safe operating area
I = ¦ (V
P
= ¦ (T )
)
CE
tot
C
C
parameter: T £ 150 °C
parameter: D = 0, T = 25°C , T £ 150 °C
C j
j
10 3
900
W
t
= 14.0µs
p
A
Ptot
IC
700
10 2
10 1
10 0
10 -1
100 µs
600
500
400
300
200
1 ms
10 ms
DC
100
0
0
20
40
60
80 100 120 °C
160
10 0
10 1
10 2
10 3
V
TC
VCE
Collector current
I = (T )
Transient thermal impedance IGBT
= (t )
Z
¦
¦
p
C
C
th JC
parameter: V
15 V , T 150 °C
parameter: D = t / T
³
£
GE
j
p
10 0
160
A
K/W
IC
ZthJC
10 -1
120
100
80
10 -2
D = 0.50
0.20
60
0.10
0.05
10 -3
40
0.02
single pulse
0.01
20
0
10 -4
0
20
40
60
80 100 120 °C
TC
160
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
4
Oct-21-1997
EUPEC [ EUPEC GMBH ]
