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EM6A9320BI-30 参数 Datasheet PDF下载

EM6A9320BI-30图片预览
型号: EM6A9320BI-30
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×32 DDR SDRAM [4M x 32 DDR SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 16 页 / 610 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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Et r on Tech  
EM6A9320  
4Mx32 DDR SDRAM  
D.C. Characteristics  
(VDD = 2.8V 5% for 350, 333, 300, or 285MHz, VDD=2.5 5% for 250 or 200MHz, TA = 0~70 °C)  
2.8 3.0 3.3 3.5  
Max  
4
5
Parameter & Test Condition  
Symbol  
Unit Notes  
OPERATING CURRENT : One bank; Active-Precharge;  
t
=t (min); t =t (min); DQ,DM and DQS inputs  
CK CK  
RC RC  
IDD0 330 320 280 260 180 160 mA  
IDD1 450 440 380 360 260 240 mA  
changing once per clock cycle; Address and control inputs  
changing once every two clock cycles.  
OPERATING CURRENT : One bank; Active-Read-  
Precharge; BL=4; CL=4; tRCDRD=4*t ; t =t (min);  
CK RC RC  
t
=t (min); lout=0mA; Address and control inputs  
CK CK  
changing once per clock cycle  
PRECHARGE POWER-DOWN STANDBY CURRENT:  
IDD2P 50 50 50 50  
45 40 mA  
All banks idle; power-down mode; t =t (min);  
CK CK  
CKE=LOW  
IDLE STANDLY CURRENT : CKE = HIGH;  
CS#=HIGH(DESELECT); All banks idle; t =t (min);  
Address and control inputs changing once per clock cycle;  
CK CK  
IDD2N 100 100 100 100 80 80 mA  
V =V  
for DQ, DQS and DM  
IN  
REF  
ACTIVE POWER-DOWN STANDBY CURRENT : one  
IDD3P 50 50 50 50  
45 40 mA  
bank active; power-down mode; CKE=LOW; t =t (min)  
CK CK  
ACTIVE STANDBY CURRENT : CS#=HIGH;CKE=HIGH;  
one bank active ; t =t (max);t =t (min);Address and  
control inputs changing once per clock cycle;  
DQ,DQS,and DM inputs changing twice per clock cycle  
RC RC  
CK CK  
IDD3N 140 135 120 110 100 100 mA  
IDD4R 560 540 480 450 440 420 mA  
OPERATING CURRENT BURST READ : BL=2; READS;  
Continuous burst; one bank active; Address and control  
inputs changing once per clock cycle; t =t (min);  
CK CK  
lout=0mA;50% of data changing on every transfer  
OPERATING CURRENT BURST Write : BL=2; WRITES;  
Continuous Burst ;one bank active; address and control  
IDD4W 470 450 400 370 300 270 mA  
IDD5 430 430 420 410 300 280 mA  
inputs changing once per clock cycle; t =t (min);  
CK CK  
DQ,DQS,and DM changing twice per clock cycle; 50% of  
data changing on every transfer  
AUTO REFRESH CURRENT : t =t  
(min);  
RC RFC  
t =t (min)  
CK CK  
SELF REFRESH CURRENT: Sell Refresh Mode ;  
IDD6  
4
4
4
4
3
3 mA  
CKE<=0.2V;t =t (min)  
CK CK  
BURST OPERATING CURRENT 4 bank operation:  
Four bank interleaving READs; BL=4;with Auto Precharge;  
IDD7 920 890 780 720 650 550 mA  
t =t (min); t =t (min); Address and control  
RC RC CK CK  
inputschang only during Active, READ , or WRITE  
command  
Note:  
1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent  
damage of the device.  
SS  
2. All voltages are referenced to V .  
3. These parameters depend on the cycle rate and these values are measured by the cycle rate  
CK  
RC  
CK  
under the minimum value of t and t . Input signals are changed one time during t  
4. Power-up sequence is described in previous page.  
.
Etron Confidential  
9
Rev 0.3  
July. 2002