Et r on Tech
EM6A9320
4Mx32 DDR SDRAM
Absolute Maximum Rating
Symbol
VIN, VOUT
VDD, VDDQ
TA
Item
Rating
- 0.3 ~ VDDQ+0.3
-0.3 ~ 3.6
0~70
Unit
V
Note
Input, Output Voltage
Power Supply Voltage
Ambient Temperature
Storage Temperature
V
C
°
C
°
C
°
TSTG
- 55~150
TSOLDER
PD
Soldering Temperature (10s)
Power Dissipation
240
2.0
50
W
IOUT
Short Circuit Output Current
mA
Recommended D.C. Operating Conditions (SSTL_2 In/Out, TA = 0 ~ 70 °C)
Symbol
Parameter
Min.
Typ.
2.8
2.5
2.8
2.5
-
Max.
Unit
Note
2.66
2.94
V
1,2
VDD Power Supply Voltage
2.375
2.625
1,3
2.66
2.94
V
1,2
VDDQ Power Supply Voltage(for I/O )
VREF Input Reference Voltage
2.375
2.625
1,3
0.49 x VDDQ
0.51 x VDDQ
V
V
VTT
Termination Voltage
V
– 0.04
V
REF
V
+ 0.04
REF
REF
REF
VIH(DC) Input High Voltage
VIL(DC) Input Low Voltage
VOH Output High Voltage
V
+ 0.15
-
-
-
-
-
-
V
+ 0.3
V
DDQ
Vssq - 0.3
V
- 0.15
V
REF
V + 0.76
tt
-
V
I
= -15.2 mA
= +15.2 mA
OH
VOL
IIL
Output Low Voltage
-
V - 0.76
tt
V
I
OL
Input Leakage Current
Output Leakage Current
- 5
- 5
5
5
uA
uA
IOL
Note : 1. Under all conditions VDDQ must be less than or equal to VDD
2. For CLK Frequency is 350, 333, 300, or 285MHz
3. For CLK Frequency is 250, or 200MHz
.
Capacitance (VDD = 2.8V, f = 1MHz, TA = 25 °C)
Parameter
Symbol
Min.
Max.
Unit
Input Capacitance (A0~A11, BA0, BA1)
CIN1
CIN2
COUT
CIN3
4
3
6
6
5
5
8
8
pF
pF
pF
pF
Input Capacitance (CK, CK#, CKE, CS#, RAS#, CAS#, WE#)
DQ & DQS input/output capacitance
DM0~DM3 input/output capacitance
Note: These parameters are periodically sampled and are not 100% tested.
Etron Confidential
8
Rev 0.3
July. 2002
ETRON [ ETRON TECHNOLOGY, INC. ]
