Et r on Tech
EM566168
DC Characteristics
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
I
V
V
= V
to V
to V
Input Leakage Current
-1
1
LI
µA
IN
SS
DD
= V
IO
SS
DD
Output Leakage Current
CE1# = V , CE2 = V or
IH IL
-1
1
µA
I
LO
OE# = V or WE# = V
IH IL
Cycle time = Min., 100% duty
= 0mA, CE1# = V ,
Operating Current @ Min
Cycle Time
25
mA
I
−
IO
IL
I
CC1
CE2 = V , V = V or V
IH IN IH IL
Cycle time = 1µs, 100% duty
Operating Current @ Max
Cycle Time (1µs)
I
= 0mA, CE1# ≤ 0.2V,
IO
CE2 ≥ V
3
mA
−
−
I
CC2
-0.2V, V ≤ 0.2V
IN
DD
or V ≥ V
-0.2V
IN
DD
– 0.2V and
CE1# = V
DD
– 0.2V,
I
100
10
µA
µA
Standby Current (CMOS) CE2 = V
SB1
DD
Other inputs = V
SS
~ V
CC
CE2 ≤ 0.2V, Other inputs =
V
I
SBD
Deep Power Down
~ V
CC
SS
V
Output Low Voltage
Output High Voltage
I
= 2.1mA
0.4
−
V
V
OL
OL
V
I
= -1.0mA
2.4
−
OH
OH
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
8
Unit
pF
Test Conditions
Input capacitance
Output capacitance
C
V
= GND
= GND
−
−
−
IN
IN
C
10
pF
V
OUT
−
OUT
Notes: These parameters are sampled and not 100% tested.
Preliminary
4
Rev 0.2
Feb. 2002
ETRON [ ETRON TECHNOLOGY, INC. ]
