ESMT
M24L816512DA
Switching Characteristics (Over the Operating Range) (continued)[10, 11, 12, 13, 14]
-55
-70
Parameter
Description
Unit
Min.
Max.
Min.
Max.
Write Cycle[13]
tWC
Write Cycle Time
55
45
70
55
ns
ns
CE1 LOW and CE2 HIGH to Write
End
tSCE
tAW
tHA
tSA
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
45
0
0
55
0
0
ns
ns
ns
tPWE
tBW
40
50
42
0
55
55
42
0
ns
ns
ns
ns
ns
ns
WE Pulse Width
BLE /BHE LOW to Write End
Data Set-up to Write End
tSD
tHD
Data Hold from Write End
tHZWE
tLZWE
25
25
WE LOW to High-Z[11, 12]
WE HIGH to Low-Z[11, 12]
5
5
Switching Waveforms
Read Cycle 1 (Address Transition Controlled)[14, 15, 16]
Read Cycle 2 (OE Controlled)[14, 15]
Notes:
15. WE is HIGH for Read Cycle.
16. Device is continuously selected. OE , CE = VIL
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.1 5/12
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
