ESMT
M24L816512DA
Maximum Ratings
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–40°C to +85°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[6, 7, 8] .......................................−0.4V to 3.7V
DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Operating Range
Ambient
Range
VCC
Temperature (TA)
−25°C to +85°C
−40°C to +85°C
Extended
Industrial
2.7V to 3.6V
2.7V to 3.6V
DC Electrical Characteristics (Over the Operating Range) [5, 6, 7, 8]
-55
-70
Parameter
Description
Test Conditions
Unit
Typ
.[5]
3.0
Typ.
[5]
Min.
2.7
Max. Min.
Max.
VCC
VOH
Supply Voltage
Output HIGH
Voltage
3.6
2.7
3.6
V
V
VCC
-
VCC
-
IOH = −0.1 mA
0.4
0.4
Output LOW
Voltage
VOL
IOL = 0.1 mA
0.4
0.4
V
Input HIGH
Voltage
Input LOW Voltage
Input Leakage
Current
0.8*
VCC
-0.4
VCC
0.4V
0.4
+
0.8*
VCC
-0.4
VCC+0
.4V
0.4
VIH
VIL
IIX
V
V
f = 0
GND ≤VIN < VCC
-1
-1
+1
-1
-1
+1
µA
Output Leakage
Current
IOZ
ICC
GND ≤ VOUT ≤ VCC, Output Disabled
+1
22
5
+1
17
5
µA
f = fMAX = 1/tRC
f = 1 MHz
VCC = 3.6V
IOUT = 0mA
CMOS level
11
2
11
2
VCC Operating
Supply Current
mA
CE ≥VCC − 0.2V, VIN ≥ VCC − 0.2V, VIN
≤ 0.2V, f = fMAX (Address and Data
Automatic CE
Power-Down
Current
ISB1
100
55
400
100
55
400
µA
µA
Only), f = 0 ( OE , WE , BHE and
BLE )
—CMOS Inputs
Automatic CE
Power-Down
Current
CE ≥ VCC−0.2V,
VIN ≥ VCC − 0.2V or
VIN ≤ 0.2V,
VCC = 3.3V
100
110
100
110
ISB2
VCC = 3.6V
—CMOS Inputs
f = 0
Capacitance[9]
Parameter
Description
Test Conditions
Max.
Unit
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz
VCC = VCC(typ)
8
8
pF
pF
Thermal Resistance[9]
Parameter
Description
Test Conditions
BGA
55
Unit
°C/W
ΘJA
Thermal Resistance(Junction to Ambient) Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/ JESD51.
ΘJC
Thermal Resistance (Junction to Case)
17
°C/W
Notes:
6.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns.
7.VIL(MIN) = –0.5V for pulse durations less than 20 ns.
8.Overshoot and undershoot specifications are characterized and are not 100% tested.
9.Tested initially and after design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.1 3/12
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
