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M14D5121632A-3BIG2H 参数 Datasheet PDF下载

M14D5121632A-3BIG2H图片预览
型号: M14D5121632A-3BIG2H
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 62 页 / 1001 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M14D5121632A (2H)  
Operation Temperature Condition (TC) -40°C~95°C  
DC Specifications  
(IDD values are for the operation range of Voltage and Temperature)  
Version  
Unit  
Parameter  
Symbol  
Test Condition  
-1.8  
-2.5  
-3  
One bank;  
CK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS (IDD)min;  
CKE is High, CS is HIGH between valid commands;  
Address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
One bank; IOUT = 0mA;  
t
Operating Current  
(Active - Precharge)  
IDD0  
100  
90  
80  
mA  
BL = 4, CL = CL(IDD), AL = 0;  
t
t
CK = tCK (IDD), tRC = tRC (IDD),  
RAS = tRAS (IDD)min, tRCD = tRCD (IDD);  
Operating Current  
(Active - Read -  
Precharge)  
IDD1  
120  
15  
110  
15  
110  
15  
mA  
mA  
CKE is HIGH, CS is HIGH between valid commands;  
Address bus inputs are SWITCHING;  
Data pattern is same as IDD4W  
All banks idle;  
Precharge  
Power-Down  
Standby Current  
tCK = tCK (IDD); CKE is LOW;  
Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
IDD2P  
IDD2Q  
All banks idle;  
t
Other control and address bus inputs are STABLE;  
Data bus inputs are FLOATING  
CK = tCK (IDD); CKE is HIGH, CS is HIGH;  
Precharge Quiet  
Standby Current  
60  
60  
55  
55  
50  
50  
mA  
mA  
All banks idle;  
tCK = tCK (IDD); CKE is HIGH, CS is HIGH;  
Other control and address bus inputs are SWITCHING;  
Idle Standby Current IDD2N  
Data bus inputs are SWITCHING  
All banks open;  
CK = tCK (IDD); CKE is LOW;  
Other control and address bus inputs  
are STABLE;  
Fast PDN Exit  
MRS(12) = 0  
75  
25  
65  
25  
60  
25  
t
Active Power-down  
IDD3P  
mA  
mA  
Standby Current  
Slow PDN Exit  
MRS(12) = 1  
Data bus input are FLOATING  
All banks open;  
t
CK = tCK (IDD), tRAS = tRAS (IDD)max, tRP = tRP (IDD);  
Active Standby  
IDD3N  
CKE is HIGH, CS is HIGH between valid commands;  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
95  
80  
75  
Current  
All banks open, continuous burst Reads, IOUT = 0mA;  
BL = 4, CL = CL (IDD), AL = 0;  
t
CK = tCK (IDD), tRAS = tRAS (IDD)max, tRP = tRP (IDD);  
Operation Current  
IDD4R  
230  
190  
180  
mA  
mA  
CKE is HIGH, CS is HIGH between valid commands;  
Address bus inputs are SWITCHING;  
(Read)  
Data pattern is the same as IDD4W;  
All banks open, continuous burst Writes;  
BL = 4, CL = CL (IDD), AL = 0;  
t
CKE is HIGH, CS is HIGH between valid commands;  
Address bus inputs are SWITCHING;  
CK = tCK (IDD), tRAS = tRAS (IDD)max, tRP = tRP (IDD);  
Operation Current  
IDD4W  
240  
200  
190  
(Write)  
Data bus inputs are SWITCHING  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Aug. 2011  
Revision : 1.1 6/62