ESMT
M13S64164A (2Y)
Absolute Maximum Rating
Parameter
Voltage on VDD & VDDQ supply relative to VSS
Voltage on inputs relative to VSS
Voltage on I/O pins relative to VSS
Operating ambient temperature
Storage temperature
Symbol
VDD, VDDQ
VINPUT
VIO
Value
Unit
V
-1.0 ~ 3.6
-1.0 ~ 3.6
V
-0.5 ~ VDDQ+0.5
0 ~ +70
V
°C
TA
TSTG
-55 ~ +150
°C
W
Power dissipation
PD
IOS
1
Short circuit current
50
mA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operation Conditions & Specifications
DC Operation Conditions
Recommended operating conditions (Voltage reference to VSS = 0V)
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage
VDD
VDDQ
2.3
2.3
2.7
V
V
V
V
V
V
I/O Supply voltage
I/O Reference voltage
2.7
VREF
0.49*VDDQ
VREF - 0.04
VREF + 0.15
-0.3
0.51*VDDQ
VREF + 0.04
VDDQ + 0.3
VREF - 0.15
1
2
I/O Termination voltage (system)
Input logic high voltage
VTT
VIH (DC)
VIL (DC)
Input logic low voltage
VIN (DC)
-0.3
VDDQ + 0.3
V
Input Voltage Level, CLK and CLK inputs
VID (DC)
0.36
0.71
VDDQ + 0.6
1.4
V
-
3
4
Input Differential Voltage, CLK and CLK inputs
V–I Matching: Pullup to Pulldown Current Ratio
VI (Ratio)
Input leakage current: Any input 0V ≤ VIN ≤ VDD
μ A
μ A
IL
-2
-5
2
5
(All other pins not tested under = 0V)
Output leakage current (DQs are disable; 0V ≤ VOUT ≤ VDDQ)
IOZ
Elite Semiconductor Memory Technology Inc.
Publication Date : Apr. 2012
Revision : 1.0 4/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
