ESMT
M13S5121632A (2A)
Absolute Maximum Rating
Parameter
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Voltage on VDDQ supply relative to VSSQ
Operating ambient temperature
Storage temperature
Symbol
VIN, VOUT
VDD
Value
-0.5 ~ VDDQ + 0.5
-0.5 ~ 3.7
Unit
V
V
VDDQ
-0.5 ~ 3.7
V
°C
TA
0 ~ +70
TSTG
-55 ~ +150
°C
Power dissipation
PD
IOS
1500
50
mW
mA
Short circuit current
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operation Condition & Specifications
DC Operation Condition
Recommended operating conditions (Voltage reference to VSS = 0V, TA = 0 to 70 °C )
Parameter
Symbol
VDD
Min
2.3
Max
2.7
Unit
V
Note
Supply voltage
I/O Supply voltage
VDDQ
2.3
2.7
V
I/O Reference voltage
VREF
0.49*VDDQ
VREF - 0.04
VREF + 0.15
-0.3
0.51*VDDQ
VREF + 0.04
VDDQ + 0.3
VREF - 0.15
V
1
2
I/O Termination voltage (system)
Input logic high voltage
Input logic low voltage
VTT
V
VIH (DC)
VIL (DC)
VIN (DC)
V
V
V
-0.3
VDDQ + 0.3
Input Voltage Level, CLK and CLK inputs
VID (DC)
0.36
-2
VDDQ + 0.6
V
3
Input Differential Voltage, CLK and CLK inputs
Input leakage current
II
μ A
μ A
2
5
Output leakage current
IOZ
-5
Output High Current (Normal strength driver)
(VOUT =VDDQ-0.373V, min VREF, min VTT)
IOH
IOL
-16.2
mA
mA
Output Low Current (Normal strength driver)
(VOUT = 0.373V)
+16.2
Notes: 1. VREF is expected to be equal to 0.5* VDDQ of the transmitting device, and to track variations in the DC level of the same.
Peak-to-peak noise on VREF may not exceed 2% of the DC value.
2. VTT is not applied directly to the device. VTT is system supply for signal termination resistors, is expected to be set equal
to VREF, and must track variations in the DC level of VREF
.
3. VID is the magnitude of the difference between the input level on CLK and the input level on CLK .
Elite Semiconductor Memory Technology Inc.
Publication Date : May 2012
Revision : 1.1 4/47
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
