ESMT
M13S2561616A
Operation Temperature Condition -40~85°C
60 Ball BGA
1
2
3
7
8
9
V
DD
DQ0
V
DDQ
DQ15
V
SS
V
SSQ
A
B
C
D
E
F
VSSQ
DQ2
DQ1
DQ3
DQ14
VDDQ
DQ13
DQ4
DQ6
LDQS
VDDQ
DQ12
DQ10
DQ8
V
SSQ
DDQ
DQ11
DQ9
V
SSQ
V
DQ5
DQ7
UDQS
VDDQ
VSSQ
LDM
WE
VDD
V
REF
V
SS
NC
UDM
CLK
G
H
J
CLK
CAS
CS
A12
A11
A8
CKE
A9
RAS
BA1
BA0
A10/AP
A1
K
L
A0
A2
A7
A6
A5
M
A4
VDD
A3
VSS
Pin Description
Pin Name
Function
Pin Name
Function
Address inputs
DM is an input mask signal for write
data. LDM corresponds to the data
on DQ0~DQ7; UDM correspond to
the data on DQ8~DQ15.
- Row address A0~A12
- Column address A0~A8
A10/AP : AUTO Precharge
A0~A12,
BA0,BA1
LDM, UDM
BA0, BA1 : Bank selects (4 Banks)
DQ0~DQ15
Data-in/Data-out
Clock input
CLK, CLK
CKE
Row address strobe
Column address strobe
Write enable
Clock enable
RAS
CAS
Chip select
CS
VDDQ
VSSQ
VREF
Supply Voltage for GDQ
Ground for DQ
WE
VSS
Ground
VDD
Power
Reference Voltage for SSTL-2
Bi-directional Data Strobe. LDQS
corresponds to the data on DQ0~DQ7;
UDQS correspond to the data on
DQ8~DQ15.
LDQS, UDQS
NC
No connection
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.1
4/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
