ESMT
M13S2561616A
Operation Temperature Condition -40~85°C
AC Timing Parameter & Specifications-continued
-5
-6
Parameter
Symbol
tHP
min
max
min
max
ns
ns
tCLmin or
tCLmin or
Half Clock Period
-
-
t
CHmin
HP-tQHS
-
t
CHmin
tHP-tQHS
-
DQ-DQS output hold time
Data hold skew factor
tQH
t
-
-
ns
ns
tQHS
0.5
0.55
ACTIVE to PRECHARGE
command
tRAS
tRC
40
55
70
70K
42
60
72
70K
ns
ns
ns
Row Cycle Time
-
-
-
-
AUTO REFRESH Row Cycle
Time
tRFC
ACTIVE to READ,WRITE
delay
tRCD
tRP
15
15
-
-
18
18
-
-
ns
ns
PRECHARGE command
period
ACTIVE to READ with
AUTOPRECHARGE
command
tRAP
18
120K
18
120K
ns
ACTIVE bank A to ACTIVE
bank B command
tRRD
tWR
10
15
2
-
-
-
12
15
1
-
-
-
ns
ns
tCK
Write recovery time
Write data in to READ
command delay
tWTR
Col. Address to Col. Address
delay
tCCD
tREFI
1
-
-
1
-
-
tCK
us
Average periodic refresh
interval
7.8
7.8
Write preamble
tWPRE
tWPST
tRPRE
tRPST
0.25
0.4
-
0.25
0.4
-
tCK
tCK
tCK
tCK
Write postamble
0.6
1.1
0.6
0.6
1.1
0.6
DQS read preamble
DQS read postamble
0.9
0.9
0.4
0.4
Clock to DQS write preamble
setup time
tWPRES
0
2
-
-
0
1
-
-
ns
Load Mode Register /
Extended Mode register
cycle time
tMRD
tCK
Exit self refresh to READ
command
tXSRD
tXSNR
tDAL
200
75
-
-
-
200
75
-
-
-
tCK
ns
ns
Exit self refresh to
non-READ command
Autoprecharge write
recovery+Precharge time
30
30
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.1
8/49
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
