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M13S128168A-6TVAG2N 参数 Datasheet PDF下载

M13S128168A-6TVAG2N图片预览
型号: M13S128168A-6TVAG2N
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 49 页 / 709 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S128168A (2N)  
Automotive Grade  
DC Operation Conditions - continued  
Parameter  
Symbol  
Min  
Max  
Unit  
Note  
Output High Current (Full strength driver)  
(VOUT =VDDQ-0.373V, min VREF, min VTT)  
IOH  
-15  
mA  
5, 7  
Output Low Current (Full strength driver)  
(VOUT = 0.373V, max VREF, max VTT)  
IOL  
IOH  
IOL  
IOH  
IOL  
+15  
-9  
mA  
mA  
mA  
mA  
mA  
5, 7  
6
Output High Current (Reduced strength driver – 60%)  
(VOUT = VDDQ-0.763V, min VREF, min VTT)  
Output Low Current (Reduced strength driver – 60%)  
(VOUT = 0.763V, max VREF, max VTT)  
+9  
6
Output High Current (Reduced strength driver – 30%)  
(VOUT = VDDQ-1.056V, min VREF, min VTT)  
-4.5  
+4.5  
6
Output Low Current (Reduced strength driver – 30%)  
(VOUT = 1.056V, max VREF, max VTT)  
6
Notes:  
1. VREF is expected to be equal to 0.5* VDDQ of the transmitting device, and to track variations in the DC level of the same.  
Peak-to-peak noise on VREF may not exceed 2% of the DC value.  
2. VTT is not applied directly to the device. VTT is system supply for signal termination resistors, is expected to be set  
equal to VREF, and must track variations in the DC level of VREF  
.
3. VID is the magnitude of the difference between the input level on CLK and the input level on CLK .  
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire  
temperature and voltage range, for device drain to source voltages from 0.25 V to 1.0 V. For a given output, it represents  
the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the  
maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to source voltages from 0.1 to 1.0.  
5. VOH = 1.95V, VOL =0.35V for others.  
6. VOH = 1.9V, VOL =0.4V for others.  
7. The values of IOH(DC) is based on VDDQ = 2.3V and VTT = 1.19V for others.  
The values of IOL(DC) is based on VDDQ = 2.3V and VTT = 1.11V for others.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Mar. 2013  
Revision : 1.1 5/49