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M13S128168A-6TVAG2N 参数 Datasheet PDF下载

M13S128168A-6TVAG2N图片预览
型号: M13S128168A-6TVAG2N
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 49 页 / 709 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S128168A (2N)  
Automotive Grade  
Ordering Information  
Product ID  
Max Freq.  
Package  
Comments  
Automotive range (V): -40to +85℃  
M13S128168A -4TVG2N  
M13S128168A -5TVG2N  
M13S128168A -6TVG2N  
M13S128168A -4BVG2N  
M13S128168A -5BVG2N  
M13S128168A -6BVG2N  
250MHz (DDR500)  
66 pin TSOPII  
60 Ball BGA  
200MHz (DDR400)  
166MHz (DDR333)  
250MHz (DDR500)  
200MHz (DDR400)  
166MHz (DDR333)  
Pb-free  
Automotive range (VA): -40to +105℃  
M13S128168A -4TVAG2N  
M13S128168A -5TVAG2N  
M13S128168A -6TVAG2N  
M13S128168A -4BVAG2N  
M13S128168A -5BVAG2N  
M13S128168A -6BVAG2N  
250MHz (DDR500)  
66 pin TSOPII  
60 Ball BGA  
200MHz (DDR400)  
166MHz (DDR333)  
250MHz (DDR500)  
200MHz (DDR400)  
166MHz (DDR333)  
Pb-free  
Functional Block Diagram  
CLK  
Clock  
Generator  
Bank D  
Bank C  
CLK  
CKE  
Bank B  
Row  
Address  
Address, BA  
Buffer  
&
Refresh  
Counter  
Mode Register &  
Extended Mode  
Register  
Bank A  
DM  
DQS  
Sense Amplifier  
Column Decoder  
Column  
Address  
Buffer  
&
Refresh  
Counter  
CS  
RAS  
CAS  
WE  
Data Control Circuit  
DQ  
DLL  
CLK, CLK  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Mar. 2013  
Revision : 1.1 2/49