ESMT
M12L64322A (2U)
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，TA = 0 to 70°C
Version
CAS
Latency
Parameter
Symbol
Test Condition
Burst Length = 1
Unit Note
-5
-6
-7
Operating Current
(One Bank Active)
ICC1
180
mA
mA
1,2
tRC ≥ tRC(min)
IOL = 0 mA
160 140
ICC2P
CKE ≤ VIL(max), tCC = 15ns
2
2
Precharge Standby Current
in power-down mode
ICC2PS
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
ICC2N
30
10
Input signals are changed one time during 30ns
Precharge Standby Current
in non power-down mode
mA
mA
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
input signals are stable
ICC2NS
ICC3P
10
10
CKE ≤ VIL(max), tCC = 15ns
Active Standby Current
in power-down mode
ICC3PS
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns
Input signals are changed one time during 2clks
All other pins ≥ VDD-0.2V or ≤ 0.2V
ICC3N
40
10
mA
mA
Active Standby Current
in non power-down mode
(One Bank Active)
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
input signals are stable
ICC3NS
3
2
280 250 220
220 200 180
I
OL = 0 mA
Operating Current
(Burst Mode)
ICC4
mA
1,2
Page Burst
2 Banks activated
Refresh Current
ICC5
ICC6
330 310 285 mA
mA
tRC ≥ tRC(min)
CKE ≤ 0.2V
Self Refresh Current
2
Note:
1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2010
Revision: 1.0 5/46
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
