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M12L2561616A-6TG2S 参数 Datasheet PDF下载

M12L2561616A-6TG2S图片预览
型号: M12L2561616A-6TG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [暂无描述]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 45 页 / 933 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L2561616A (2K)  
AC CHARACTERISTICS (AC operating condition unless otherwise noted)  
-5  
-6  
-7  
Parameter  
Symbol  
Unit  
Note  
Min  
Max  
Min  
Max  
Min  
Max  
CAS latency = 3  
5
10  
-
6
10  
-
7
10  
-
CLK cycle time  
tCC  
tSAC  
tOH  
1000  
1000  
1000  
ns  
ns  
ns  
1
1,2  
2
CAS latency = 2  
CAS latency = 3  
CAS latency = 2  
CAS latency = 3  
CAS latency = 2  
CLK to valid  
output delay  
4.5  
5.4  
-
5.4  
5.4  
-
5.4  
5.4  
-
-
-
-
Output data  
hold time  
2
2
2
2
2
-
2
2.5  
2.5  
1.5  
0.8  
1
-
2
2.5  
2.5  
1.5  
0.8  
1
-
CLK high pulse width  
CLK low pulse width  
Input setup time  
tCH  
tCL  
-
-
-
ns  
ns  
ns  
ns  
ns  
3
3
3
3
2
2
-
-
-
-
-
-
tSS  
tSH  
tSLZ  
1.5  
0.8  
1
Input hold time  
-
-
-
CLK to output in Low-Z  
-
-
-
CAS latency = 3  
CAS latency = 2  
-
4.5  
-
5.4  
-
5.4  
CLK to output  
in Hi-Z  
tSHZ  
ns  
-
-
5.4  
-
5.4  
-
5.4  
Note:  
1. Parameters depend on programmed CAS latency.  
2. If clock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered.  
3. Assumed input rise and fall time (tr & tf) =1ns.  
If tr & tf is longer than 1ns. transient time compensation should be considered.  
i.e., [(tr + tf)/2 – 1] ns should be added to the parameter.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jun. 2012  
Revision: 1.4 6/45