ESMT
M12L2561616A (2K)
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，TA = 0 to 70 °C
Version
Parameter
Symbol
Test Condition
Unit Note
-5
-6
-7
Operating Current
(One Bank Active)
ICC1
Burst Length = 2, tRC = tRC(min), IOL = 0 mA
90
80
70
mA
1,2
Precharge Standby
Current in power-down
mode
ICC2P
CKE = VIL(max), tCC = 10ns
3
3
mA
mA
ICC2PS
CKE & CLK=VIL(max), tCC = ∞
CKE=VIH(min), CS = VIH(min), tCC = 10ns
Input signals are changed one time during 2CLK
CKE=VIH(min), CLK=VIL(max), tCC = ∞
input signals are stable
ICC2N
15
5
mA
mA
Precharge Standby
Current in non
power-down mode
ICC2NS
Active Standby
Current in power-down
mode
ICC3P
CKE=VIL(max), tCC =10ns
8
8
mA
mA
ICC3PS
CKE & CLK=VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 2 CLKs
All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE=VIH(min), CLK=VIL(max), tCC = ∞
input signals are stable
Active Standby
Current in non
power-down mode
(One Bank Active)
ICC3N
28
mA
ICC3NS
20
mA
mA
IOL = 0 mA, Page Burst, 4 Banks activated,
Operating Current
(Burst Mode)
ICC4
110
150
100
90
1,2
t
CCD = 2 CLKs
Refresh Current
ICC5
ICC6
140
5
130
mA
mA
tRFC ≥ tRFC(min)
Self Refresh Current
CKE=0.2V
Note: 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKs.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2012
Revision: 1.4 4/45
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
