M12L16161A
Isolated power supply and ground for the output buffers to provide improved
noise immunity.
VDDQ/VSSQ
N.C/RFU
Data Output Power/Ground
No Connection/
Reserved for Future Use
This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Storage temperature
Symbol
VIN,VOUT
VDD,VDDQ
TSTG
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ + 150
1
Unit
V
V
°C
W
Power dissipation
PD
Short circuit current
IOS
50
MA
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
C
Recommended operating conditions (Voltage referenced to VSS = 0V, TA=0 to 70 °
)
Parameter
Supply voltage
Symbol
VDD,VDDQ
VIH
Min
3.0
2.0
-0.3
2.4
-
Typ
3.3
3.0
0
-
-
-
-
Max
3.6
VDD+0.3
Unit
V
V
V
V
V
uA
uA
Note
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
1
2
VIL
VOH
VOL
IIL
0.8
-
0.4
5
IOH =-2mA
IOL = 2mA
-5
-5
3
4
Output leakage current
IOL
5
Note : 1.VIH (max) = 4.6V AC for pulse width
10ns acceptable.
10ns acceptable.
≤
≤
2.VIL (min) = -1.5V AC for pulse width
3.Any input 0V VIN ≤ VDD+ 0.3V, all other pins are not under test = 0V.
≤
4.Dout is disabled, 0V
VOUT ≤ VDD.
≤
CAPACITANCE (VDD = 3.3V, TA = 25 °C , f = 1MHz)
Pin
Symbol
Min
Max
Unit
CLOCK
CCLK
2.5
4.0
pF
RAS , CAS , WE , CS , CKE, LDQM,
CIN
2.5
5.0
pF
UDQM
ADDRESS
DQ0 ~DQ15
CADD
COUT
2.5
4.0
5.0
6.5
pF
pF
:
Publication Da te J an. 2000
Elite Semiconductor Memory Technology Inc.
P.3
:
Revis ion 1.3u
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
