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F25L08QA-100PG2S 参数 Datasheet PDF下载

F25L08QA-100PG2S图片预览
型号: F25L08QA-100PG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 8MX1, PDSO8, 0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 43 页 / 355 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L08QA (2S)  
GENERAL DESCRIPTION  
The F25L08QA is a 8Megabit, 3V only CMOS Serial Flash  
memory device. The device supports the standard Serial  
Peripheral Interface (SPI), and a Dual/Quad SPI. ESMT’s  
memory devices reliably store memory data even after 100,000  
programming and erase cycles.  
is divided into 256 uniform sectors with 4K byte each; 32 uniform  
blocks with 32K byte each; 16 uniform blocks with 64K byte each.  
Sectors can be erased individually without affecting the data in  
other sectors. Blocks can be erased individually without affecting  
the data in other blocks. Whole chip erase capabilities provide  
the flexibility to revise the data in the device. The device has  
Sector, Block or Chip Erase but no page erase.  
The memory array can be organized into 4,096 programmable  
pages of 256 byte each. 1 to 256 byte can be programmed at a  
time with the Page Program instruction.  
The sector protect/unprotect feature disables both program and  
erase operations in any combination of the sectors of the  
memory.  
The device features sector erase architecture. The memory array  
FUNCTIONAL BLOCK DIAGRAM  
Page Address  
Latch / Counter  
Memory  
Array  
High Voltage  
Generator  
Page Buffer  
Status  
Register  
Y-Decoder  
Byte Address  
Latch / Counter  
Command and Conrol Logic  
Serial Interface  
CE  
SCK  
SO  
(SIO  
WP  
(SIO  
HOLD  
(SIO3)  
SI  
(SIO0)  
1
)
2
)
Elite Semiconductor Memory Technology Inc.  
Publication Date: Nov. 2013  
Revision: 1.2 2/43