EBJ20UF8BCF0
Serial PD Matrix
-DJ
-GN
Byte No. Function described
Hex
Comments
Hex
92h
Comments
Number of serial PD bytes written/SPD device
size/CRC coverage
SPD revision
0
92h
176/256/0-116
176/256/0-116
1
10h
0Bh
02h
03h
19h
00h
01h
03h
52h
01h
08h
0Ch
00h
7Ch
00h
69h
Rev.1.0
10h
0Bh
02h
03h
19h
00h
01h
03h
52h
01h
08h
0Ah
00h
FCh
00h
69h
78h
69h
Rev.1.0
2
Key byte/DRAM device type
Key byte/module type
DDR3 SDRAM
DDR3 SDRAM
3
UDIMM
UDIMM
4
SDRAM density and banks
2G bits, 8 banks
2G bits, 8 banks
5
SDRAM addressing
15 rows, 10 columns
15 rows, 10 columns
6
Module nominal voltage, VDD
Module organization
1.5V
1.5V
7
1 rank/× 8 bits
1 rank/×8 bits
8
Module memory bus width
64 bits/non-ECC
64 bits/non-ECC
9
Fine timebase (FTB) dividend/divisor
Medium timebase (MTB) dividend
Medium timebase (MTB) divisor
SDRAM minimum cycle time (tCK (min.))
Reserved
5/2
5/2
10
11
12
13
14
15
16
17
18
1
1
8
8
1.5ns
—
1.25ns
—
SDRAM CAS latencies supported, LSB
SDRAM CAS latencies supported, MSB
SDRAM minimum CAS latencies time (tAA (min.))
6, 7, 8, 9, 10
—
6, 7, 8, 9, 10, 11
—
13.125ns
15ns
13.125ns
15ns
SDRAM minimum write recovery time (tWR (min.)) 78h
SDRAM minimum /RAS to /CAS delay (tRCD (min.)) 69h
13.125ns
13.125ns
SDRAM minimum row active to row active delay
(tRRD (min.))
19
30h
6ns
30h
6ns
20
21
SDRAM minimum row precharge time (tRP (min.))
SDRAM upper nibbles for tRAS and tRC
69h
11h
13.125ns
—
69h
11h
13.125ns
—
SDRAM minimum active to precharge time
(tRAS (min.)), LSB
SDRAM minimum active to active /auto-refresh time
(tRC (min.)), LSB
SDRAM minimum refresh recovery time delay
(tRFC (min.)), LSB
SDRAM minimum refresh recovery time delay
(tRFC (min.)), MSB
22
23
24
25
26
20h
89h
00h
05h
3Ch
36ns
18h
81h
00h
05h
3Ch
35ns
49.125ns
160ns
160ns
7.5ns
48.125ns
160ns
160ns
7.5ns
SDRAM minimum internal write to read command
delay (tWTR (min.))
SDRAM minimum internal read to precharge
27
28
29
30
31
3Ch
00h
F0h
83h
81h
7.5ns
3Ch
00h
F0h
83h
81h
7.5ns
command delay (tRTP (min.))
Upper nibble for tFAW
Minimum four activate window delay time
(tFAW (min.))
30ns
30ns
30ns
30ns
SDRAM optional features
DLL-off, RZQ/6, 7
PASR/2X refresh at
+85°C to +95°C
DLL-off, RZQ/6, 7
PASR/2X refresh at
+85°C to +95°C
SDRAM thermal and refresh options
32
33
Module thermal sensor
SDRAM device type
00h
00h
00h
Not incorporated
Standard
—
00h
00h
00h
Not incorporated
Standard
—
34 to 59 Reserved
Data Sheet E1689E21 (Ver. 2.1)
5
ELPIDA [ ELPIDA MEMORY ]
