CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C849I3
Issued Date : 2003.04.18
Revised Date :
Page No. : 1/4
BTD1864AI3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.25 V (typical), at I
C
/ I
B
= 2A / 0.2A
•
Excellent current gain characteristics
•
Complementary to BTB1243AI3
Symbol
BTD1864AI3
Outline
TO-251
B：Base
C：Collector
E：Emitter
B
C
E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note :
*1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
Limits
40
30
5
3
7
1
15
150
-55~+150
Unit
V
V
V
*1
A
W
°C
°C
BTD1864AI3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
