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BTB772NUJ3-P-T3-G 参数 Datasheet PDF下载

BTB772NUJ3-P-T3-G图片预览
型号: BTB772NUJ3-P-T3-G
PDF下载: 下载PDF文件 查看货源
内容描述: [Low Vcesat PNP Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 7 页 / 324 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTB772NUJ3-P-T3-G的Datasheet PDF文件第1页浏览型号BTB772NUJ3-P-T3-G的Datasheet PDF文件第2页浏览型号BTB772NUJ3-P-T3-G的Datasheet PDF文件第4页浏览型号BTB772NUJ3-P-T3-G的Datasheet PDF文件第5页浏览型号BTB772NUJ3-P-T3-G的Datasheet PDF文件第6页浏览型号BTB772NUJ3-P-T3-G的Datasheet PDF文件第7页  
Spec. No. : C631J3  
Issued Date : 2017.10.06  
Revised Date:  
CYStech Electronics Corp.  
Page:3/7  
Typical Characteristics  
Emitter Grounded Output Characteristics  
Emitter Grounded Output Characteristics  
0.45  
0.4  
1.4  
1.2  
1
IB=-5mA  
IB=-1mA  
0.35  
0.3  
0.8  
0.6  
0.4  
0.2  
0
0.25  
0.2  
IB=-2.5mA  
IB=-500uA  
0.15  
0.1  
0.05  
0
IB=0  
5
IB=0  
0
1
2
3
4
5
6
0
1
2
3
4
6
-
-
VCE, Collector-to-Emitter Voltage(V)  
VCE, Collector-to-Emitter Voltage(V)  
Emitter Grounded Output Characteristics  
Emitter Grounded Output Characteristics  
3
2.5  
2
4.5  
4
IB=-20mA  
IB=-50mA  
3.5  
3
IB=-10mA  
2.5  
2
1.5  
1
IB=-6mA  
IB=-4mA  
IB=-10mA  
IB=-5mA  
1.5  
1
IB=-2mA  
0.5  
0
0.5  
0
IB=0  
5
IB=0  
5
0
1
2
3
4
6
0
1
2
3
4
6
-
-
VCE, Collector-to-Emitter Voltage(V)  
VCE, Collector-to-Emitter Voltage(V)  
Current Gain vs Collector Current  
Current Gain vs Collector Current  
1000  
100  
10  
1000  
100  
10  
Ta=25°C  
VCE=-2V  
VCE=-5V  
VCE=-2V  
VCE=-1V  
125°C  
75°C  
25°C  
0°C  
-40°C  
1
10  
-
100  
IC, Collector Current(mA)  
1000  
10000  
1
10  
100  
-
IC, Collector Current(mA)  
1000  
10000  
BTB772NUJ3  
CYStek Product Specification