Spec. No. : C631J3
Issued Date : 2017.10.06
Revised Date:
CYStech Electronics Corp.
Page:2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
Limit
Unit
VCBO
VCEO
VEBO
-40
-30
-12
-3
V
V
V
A
A
DC
Pulse
Collector Current
IC
-7 *1
Ta=25℃
Tc=25℃
1
10
Power Dissipation
PD
W
Operating Junction and Storage Temperature Range
Tj ; Tstg
-55~+150
°C
.
Note : *1. Single Pulse Pw≦300μs, Duty≦2%
Thermal Performance
Parameter
Symbol
RθJA
RθJC
Limit
125
12.5
Unit
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
°C/W
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
-40
-30
-12
-
-
-
-
120
160
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
V
V
-
-
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-30V, IE=0
-100
-100
-0.5
-1.5
-
320
-
-
IEBO
VEB=-12V, IC=0
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
-0.2
-1
-
-
80
26
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-500mA
VCE=-5V, IE=-0.1A, f=100MHz
VCB=-10V, f=1MHz
MHz
pF
Cob
-
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
P
Range
180~320
BTB772NUJ3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
