Typical Performance
150
100
80
60
40
20
0
Conditions:
TJ = 25 °C
Conditions:
DS = 15 A
I
V
I
V
DD = 400 V
DS = 15 A
GS = -4V/+15 V
V
R
V
DD = 400 V
G(ext) = 2.5 Ω
GS = -4V/+15 V
120
90
60
30
0
ETotal
FWD = C3M0120090J
L = 142 μH
FWD = C3M0120090J
L = 142 μH
ETotal
EOn
EOn
EOff
EOff
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
30
Conditions:
TJ = 25 °C
V
I
V
DD = 400 V
DS = 15 A
GS = -4V/+15 V
25
20
15
10
5
td(off)
FWD = C3M0120090J
L = 142 μH
td(on)
tr
tf
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
7
C3M0120090J Rev. - , 12-2015
CREE [ CREE, INC ]
