Electrical Characteristics (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Min.
900
1.8
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
2.1
1.6
1
3.5
VDS = VGS, ID = 3 mA
V
V
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 3 mA, TJ = 150ºC
VDS = 900 V, VGS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
155
μA
nA
10
VGS = 15 V, VDS = 0 V
120
170
7.7
6.7
VGS = 15 V, ID = 15 A
Fig. 4,
5, 6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
VGS = 15 V, ID = 15 A, TJ = 150ºC
VDS= 15 V, IDS= 15 A
gfs
S
Fig. 7
VDS= 15 V, IDS= 15 A, TJ = 150ºC
Ciss
Coss
Crss
Eoss
Input Capacitance
350
40
3
Fig. 17,
18
VGS = 0 V, VDS = 600 V
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
pF
f = 1 MHz
AC
V
= 25 mV
9
μJ
μJ
Fig. 16
EON
Turn-On Switching Energy
49
VDS = 400 V, VGS = -4 V/15 V, ID = 15 A,
Fig. 26,
29
RG(ext) =ꢀ2.5Ω,ꢀL=ꢀ142ꢀμH,ꢀꢀTJ = 150ºC
EOFF
td(on)
tr
Turn Off Switching Energy
Turn-On Delay Time
Rise Time
16
12.5
9
VDD = 400 V, VGS = -4 V/15 V
ID = 15 A, RG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀ
Timing relative to VDS
Inductive load
Fig. 27,
29
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
15
5
,
RG(int)
Qgs
Qgd
Qg
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
16
4.8
Ω
f = 1 MHz VAC = 25 mV
VDS = 400 V, VGS = -4 V/15 V
ID = 15 A
5.0
nC
Fig. 12
Per IEC60747-8-4 pg 21
17.3
(T ꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Reverse Diode Characteristics
C
Test Conditions
Note
Symbol
Parameter
Typ.
Max.
Unit
4.8
V
V
VGS = -4 V, ISD = 7.5 A
Fig. 8, 9,
10
VSD
Diode Forward Voltage
4.4
24
VGS = -4 V, ISD = 7.5 A, T = 150 °C
J
IS
IS, pulse
trr
Continuous Diode Forward Current
Diode pulse Current
17
50
A
VGS = -4 V
Note (2)
Note (2)
A
VGS = -4 V, pulse width tP limited by Tjmax
Reverse Recover time
ns
VGS = -4 V, ISD = 15 A, VR = 400 V
Note (2)
Qrr
Irrm
Reverse Recovery Charge
115
6.2
nC
A
dif/dt = 900 A/µs, T = 150 °C
J
Peak Reverse Recovery Current
Note (2): When using SiC Body Diode the maximum recommended VGS = -4V
Thermal Characteristics
Symbol
RθJC
Parameter
Max.
1.5
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
°C/W
Fig. 21
RθJA
40
2
C3M0120090J Rev. - , 12-2015
CREE [ CREE, INC ]
