Typical Performance
800
500
400
300
200
100
0
Conditions:
IDS = 20 A
VDD = 800 V
RG(ext) = 0 Ω
VGS = -4V/+15 V
FWD = C3M0075120J
L = 156 μH
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 20 A
VGS = -4V/+15 V
FWD = C3M0075120J
600
ETotal
L = 156 μH
ETotal
EOn
400
200
0
EOn
EOff
EOff
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
80
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 20 A
VGS = -4V/+15 V
FWD = C3M0075120J
L = 156 μH
60
40
20
0
td(off)
td(on)
tr
tf
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
7
C3M0075120J Rev. -, 07-2017